Process and equipment simulation of dry silicon etching in the absence of ion bombardment

Otto, T.T.OttoWolf, H.H.WolfStreiter, R.R.StreiterDehoff, A.A.DehoffWandel, K.K.WandelGessner, T.T.Gessner2022-03-032022-03-031999https://publica.fraunhofer.de/handle/publica/19568110.1016/S0167-9317(98)00287-1en621Process and equipment simulation of dry silicon etching in the absence of ion bombardmentjournal article