Schuh, P.P.SchuhSledzik, H.H.SledzikOppermann, M.M.OppermannQuay, RüdigerRüdigerQuayKühn, JuttaJuttaKühnLim, T.T.LimWaltereit, PatrickPatrickWaltereitMikulla, MichaelMichaelMikullaAmbacher, OliverOliverAmbacher2022-03-112022-03-112011https://publica.fraunhofer.de/handle/publica/372518Wideband ampli\'02ers for the next generation of T/R modules in future active array antennas are realized as monolithically integrated circuits (MMICs) on the basis of novel InAlGaN/GaN high electron mobility transistor (HEMT) structures. All designs are realized in microstrip transmission line technology. The wideband ampli\'02er MMICs operate up to a frequency of 18 GHz. A number of measurements have been performed, including small signal S-parameter and large signal power measurements. To our knowledge, these are the \'02rst MMICs based on InAlGaN/GaN HEMTs epitaxy for wideband applications in microstrip transmission line technology.enInAIGaNGaNMMIChigh-power amplifier667conference paper