20 center dot 5% efficient silicon solar cell with a low temperature rear side process using laser-fired contacts

Brendle, W.W.BrendleNguyen, V.X.V.X.NguyenGrohe, A.A.GroheSchneiderlöchner, EricEricSchneiderlöchnerRau, UweUweRauPalfinger, G.G.PalfingerWerner, J.H.J.H.Werner2022-03-032022-03-032006https://publica.fraunhofer.de/handle/publica/21147810.1002/pip.696The paper presents a rear side structure for crystalline silicon solar cells, which is processed at a maximum temperature of 220 degrees C. Using two different material compositions for electrical and optical needs, the layer system has excellent passivation properties, enhances light trapping and allows for a good ohmic contact. With this structure we achieve an independently confirmed conversion efficiency eta =20 center dot 5% on a 250 mu m thick silicon solar cell. Due to the fact that the maximum process temperature is 220 degrees C, this layer system enables new solar cell concepts.en62169720 center dot 5% efficient silicon solar cell with a low temperature rear side process using laser-fired contactsjournal article