Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode of PMOS devices

Herden, M.M.HerdenBauer, A.J.A.J.BauerRyssel, H.H.Ryssel2022-03-032022-03-032000https://publica.fraunhofer.de/handle/publica/19864910.1016/S0026-2714(99)00264-4en670620530621Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode of PMOS devicesjournal article