Schoeck, J.J.SchoeckSchlichting, H.H.SchlichtingKallinger, B.B.KallingerErlbacher, T.T.ErlbacherRommel, MathiasMathiasRommelBauer, A.J.A.J.Bauer2022-03-132022-03-132018https://publica.fraunhofer.de/handle/publica/40075510.4028/www.scientific.net/MSF.924.164Using a combination of photoluminescence and electrical characterization, defects in the epitaxial layer of unipolar 4H-SiC power devices were matched to device characteristics and statistically analyzed. In-grown triangles had no significant effect on diode and VDMOS blocking or conduction mode, while surface triangles lead to high leakage currents even below 1 V reverse bias.endefectdiodephotoluminescencetriangular defectVDMOSwafer inspection670620530Influence of triangular defects on the electrical characteristics of 4H-SiC devicesconference paper