Engel, T.T.EngelStrittmatter, A.A.StrittmatterPassenberg, W.W.PassenbergUmbach, A.A.UmbachSchlaak, W.W.SchlaakDroge, E.E.DrogeSeeger, A.A.SeegerSteingrüber, R.R.SteingrüberMekonnen, G.C.G.C.MekonnenUnterborsch, G.G.UnterborschBach, H.-G.H.-G.BachBottcher, E.H.E.H.BottcherBimberg, D.D.Bimberg2022-03-032022-03-031998https://publica.fraunhofer.de/handle/publica/19391510.1109/68.705622We report on the successful monolithic integration of an InP-based photoreceiver operating in the narrow band around 38 GHz at a wavelength of 1.55 mu m, The optoelectronic integrated circuit (OEIC) incorporates two types of high-speed devices, a submicrometer metal-semiconductor-metal photodetector (MSM PD) made of InGaAs-InP and quarter-micrometer high-electron-mobility-transistors (HEMTs) based on a lattice-matched InGaAs-InAlAs-InP layer stack. For this purpose a fabrication process requiring only twelve main steps including a metal-organic chemical vapor deposition growth for the MSM PD layers and a MBE regrowth for the HEMT layers has been developed. At 38 GHz, a responsivity of 3.5 A/W for the OEIC is achieved.enHEMT integrated circuitsiii-v semiconductorsindium compoundsintegrated optoelectronicsmetal-semiconductor-metal structuresoptical receiversphotodetectorsvapour phase epitaxial growthnarrow-band photoreceiver oeicmonolithic integrationoptoelectronic integrated circuithigh-speed devicessubmicron msm photodetectormetal-semiconductor-metal photodetectorhigh-electron-mobility- transistorsHEMTlattice-matched InGaAs-inalas-InP layer stackfabrication processmetal-organic cvdchemical vapor depositionmbe regrowthmocvd growth38 GHz1.55 micronInGaAs-InAlAs-InPInGaAs-InP621535journal article