Belz, JoachimJoachimBelzBurbach, GertGertBurbachPieczynski, JanuszJanuszPieczynskiVogt, HolgerHolgerVogt2022-03-082022-03-081990https://publica.fraunhofer.de/handle/publica/317379CMOS devices and circuits have been built in SIMOX subtrates, implanted using a NV 200 high current oxygen implanter. NMOS and PMOS transistors are free from leakage currents showing excellent subthreshold slopes (70 mV/dec for NMOS). The variation of threshold voltage across a 4 inch wafer is less than 30 mV and comparable to bulk silicon devices. The SOI-circuits can be operated at temperatures up to 300 xC.enhigh-temperature-applicationsSIMOX-devices-performanceSIMOX-substrate-preparation621conference paper