Monemar, B.B.MonemarHoltz, P.O.P.O.HoltzHarris, C.I.C.I.HarrisBergmann, J.P.J.P.BergmannKalt, H.H.KaltSundaram, M.M.SundaramMerz, J.L.J.L.MerzGossard, A.C.A.C.GossardKöhler, KlausKlausKöhlerSchweizer, T.T.Schweizer2022-03-032022-03-031993https://publica.fraunhofer.de/handle/publica/18333510.4028/www.scientific.net/MSF.117-118.29Shallow impurities in AlGaAs/GaAs quantum wells, doped with donors or acceptors in the well, are discussed in relation to recent experimental data from optical spectroscopy. Results from two-particle spectroscopy, the influence of high doping levels, the interplay with excition localization, as well as picosecond transient data are covered.enphotoluminescencePhotolumineszenzQuantentopfquantum wells621667530Optical spectroscopy of shallow impurity states in semiconductor quantum wells.Optische Spektroskopie an flachen Defektzuständen in Halbleiter Quantentöpfenjournal article