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Author: Volz, K. ×

Publications Search Results

Now showing 1 - 3 of 3
  • Publication
    Vibrational mode and dielectric function spectra of BGaP probed by Raman scattering and spectroscopic ellipsometry
    ( 2011)
    Rogowsky, S.
    ;
    Baeumler, Martina
    ;
    Wolfer, M.
    ;
    Kirste, Lutz
    ;
    Ostendorf, Ralf
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    Wagner, J.
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    Liebich, S.
    ;
    Stolz, W.
    ;
    Volz, K.
    ;
    Kunert, B.
    The influence of boron incorporation in Bx Ga1-xP (0
  • Publication
    Reduced threshold current dilute nitride Ga(NAsP)/GaP quantum well lasers grown by MOVPE
    ( 2011)
    Hossain, N.
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    Sweeney, S.J.
    ;
    Rogowsky, S.
    ;
    Ostendorf, Ralf
    ;
    Wagner, J.
    ;
    Liebich, S.
    ;
    Zimprich, M.
    ;
    Volz, K.
    ;
    Kunert, B.
    ;
    Stolz, W.
    Recent significant improvements in Ga(NAsP)/GaP quantum well lasers grown by metal organic vapour phase epitaxy on a GaP substrate are reported. At room temperature, the devices show a threshold current density of 4.0 kAcm(-2) at a lasing wavelength of 981 nm for a cavity length of 1 mm and a characteristic temperature of 58 K in the temperature region of 220-295 K. These improvements further verify the possible application for the novel III/V Ga(NAsP)/GaP material system to integrate long-term stable laser diodes in a standard CMOS-compatible electronic chip.
  • Publication
    Correlation of band formation and local vibrational mode structure in Ga(0.95)Al(0.05)As(1-x)N(x) with 0<= x <= 0.03
    ( 2006)
    Güngerich, M.
    ;
    Klar, P.J.
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    Heimbrodt, W.
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    Volz, K.
    ;
    Köhler, Klaus
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    Wagner, J.
    ;
    Polimeni, A.
    ;
    Capizzi, M.
    ;
    Alt, H.C.
    ;
    Gomeniuk, Y.V.
    We present comprehensive optical studies of a series of as-grown and hydrogenated Ga(0.95)Al(0.05)As(1-x)N(x) epitaxial layers with various amounts x of substitutional nitrogen. Photomodulated and contactless electromodulated spectroscopies were performed to gain information about the influence of N incorporation on the band structure. The results are interpreted in terms of the band-anticrossing model and compared to corresponding GaAs:N data. The local vibrational properties of the N atoms studied by Raman and Fourier-transform infrared absorption were found to depend strongly on the Ga/Al nearest-neighbour configurations of N. Correlations between local N environments and global band structure properties are confirmed by comparing results obtained before and after hydrogenation of the samples.