Publications Search Results
Now showing 1 - 10 of 28
PublicationGaSb-, InGaAsSb-, InAsSbp- and Ge-TPV cells for low-temperature TPV applications( 2003)
;Sulima, O.V. ;Bett, A.W. ;Mauk, M.G. ;Dimroth, F. ;Dutta, P.S.Mueller, R.L.
PublicationGaSb photovoltaic cells for applications in TPV generators( 2003)
;Bett, A.W.Sulima, O.V.GaSb thermophotovoltaic (TPV) cells are one of the reasons for the renewed interest in TPV technology. Today, they are the most suitable choice for modem TPV generators. This paper reviews the background and the status of the GaSb photovoltaic cell development. GaSb TPV cells are fabricated either by a zinc vapour diffusion technology or by epitaxial methods such as liquid phase epitaxy or metal-organic vapour phase epitaxy. Efficiencies of more than 30% under filtered blackbody spectra were reported.
PublicationGaSb-, InGaAsSb-, InGaSb-, InAsSbP- and Ge-TPV cells with diffused emitters( 2002)
;Sulima, O.V. ;Bett, A.W. ;Dutta, P.S. ;Mauk, M.G.Müller, R.L.GaSb thermophotovoltaic (TPV) cells are believed to be the most suitable choice for modern TPV generators, both in terms of efficiency and simplicity of the diffusion technology used. However, TPV cells with bandgaps (Eg) lower than GaSb are expected to be advantageous for low-temperature (< 1000°C) non-wavelength-selective TPV radiators because they provide more effective absorption of the blackbody infrared radiation. In this work, together with GaSb (Eg = 0.72 eV), semiconductors with a lower Eg - Ge (Eg = 0.66 eV), InGaSb (Eg = 0.60 eV), InGaAsSb (Eg = 0.55 eV) and InAsSbP (Eg = 0.39 eV) - were studied for TPV cells. InGaAsSb cells seem to be the most promising candidate to replace GaSb cells in the low-temperature TPV generators.
PublicationDiffusion on Zn in TPV materials: GaSb, InGaSb, InGaAsSb and InAsSbP( 2002)
;Sulima, O.V. ;Bett, A.W. ;Mauk, M.G. ;Ber, B.Y.Dutta, P.S.
PublicationGasb-InGaSb and Ge-TPV cells with diffused emitters( 2002)
;Sulima, O.V. ;Bett, A.W. ;Dutta, P.S. ;Mauk, M.G.Mueller, R.L.
PublicationFabrication and simulation of GaSb thermophotovoltaik cells( 2001)
;Sulima, O.V.Bett, A.W.
PublicationLiquid-phase epitaxy of low-bandgap III-V antimonides for thermophotovoltaic devices( 2000)
;Mauk, M.G. ;Shellenbarger, Z.A. ;Cox, J.A. ;Sulima, O.V. ;Bett, A.W. ;Müller, R.L. ;Sims, P.E. ;Mc Neely, J.B.Netta, L.C. di
PublicationConcentrator array based on GaAs cells and fresnel lens concentrator( 2000)
;Andreev, A. ;Bett, A.W. ;Dimroth, F. ;Hein, M. ;Letay, G. ;Rumyantsev, V.D. ;Shvarts, M.Z.Sulima, O.V.
PublicationThermophotovoltaic cells on zinc diffused poly-crystalline GaSb( 2000)
;Sulima, O.V. ;Bett, A.W. ;Dutta, P.S. ;Ehsani, H.Gutmann, R.J.
PublicationGrowth of antimony-based materials in a multiwafer planetary MOVPE-reactor( 2000)
;Agert, C. ;Lanyi, P. ;Sulima, O.V. ;Stolz, W.Bett, A.W.Four-junction photovoltaic solar cells are expected to reach conversion efficiencies around 40%. Mechanical stacking of two monolithic tandem cells is suggested. As a top cell the highly developed GaInP:GaAs tandem cell is considered. Device modelling is presented for the bottom cell. An infrared monolithic tandem solar cell is proposed which is a combination of an (AlGa)(AsSb) top cell (E/sub gap/=1.03 eV) and a GaSb bottom cell based on GaSb as substrate material. The MOVPE growth of GaSb, GaAsSb and AlGaSb in a multiwafer planetary reactor that is suited to large-scale industrial production is reported. Influences of the substrate preparation, orientation of the growth surface, growth temperature and the V-III ratio on material quality are presented. Both hydrogen and nitrogen were employed as the carrier gas in different experiments. The best layers were obtained on (100) substrates oriented 2 degrees toward (111)A, using hydrogen as carrier