Optimizing top-TCO for perovskite-silicon tandem solar cells
Using reactive sputtering processes, indium zinc oxide (IZO) and hydrogen-doped indium oxide (IO:H) films were developed for use as the top-TCO contact for perovskite-silicon tandem solar cells. Perovskite materials have shown significant promise as an upcoming absorber material for use in tandem solar cell configurations. Both the IZO and IO:H films were deposited at temperatures below 100 °C in order to prevent any possible degradation of the perovskite absorber material. The IO:H films required a post-deposition thermal annealing process of 220 °C for 30 minutes in air, after which they showed comparable conductivities and improved absorptance when compared with the IZO films. Additionally, the IO:H films showed over double (112 vs < 50) the carrier mobilities of the IZO films, showing potential as a future top-TCO candidate.