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  4. Kerfless Wafering Approach with Si and Ge Templates for Si, Ge and III-V Epitaxy
 
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2020
  • Konferenzbeitrag

Titel

Kerfless Wafering Approach with Si and Ge Templates for Si, Ge and III-V Epitaxy

Abstract
We work on the transfer from CZ wafers to epitaxially grown Si and Ge wafers on reusable substrates with a porous detachment layer (""kerfless wafering"") to reduce material and energy consumption. We report on our progress of applying the kerfless wafering approach to Si and to Ge wafers. For Si, we develop templates and epitaxially grown wafers (SiEpiWafers) since many years in our self-made CVD reactor (""RTCVD"") and are now bringing their quality to the next level with a new, microelectronic CVD reactor (""PEpi"") which allows us to grow 6"" and 156x156 mm² (M0) epitaxial Si wafers with adjustable thickness and doping level (n- and p-type). In the first test runs, we achieved as-grown lifetimes up to 840 µs and a total thickness variation of ~ 10%. For Ge, we were successful in developing and understanding a porous layer stack leading to 4"" detachable Ge templates for future Ge or III-V epitaxial growth.
Author(s)
Weiss, C.
Schreiber, W.
Drießen, M.
Sorgenfrei, R.
Liu, T.
Ohnemus, M.
Janz, S.
Hauptwerk
37th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2020
Konferenz
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) 2020
DOI
10.4229/EUPVSEC20202020-2DV.2.9
File(s)
N-618172-1.pdf (1.03 MB) N-618172.pdf (947.55 KB)
Language
Englisch
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ISE
Tags
  • Photovoltaik

  • epitaxy

  • lifetime

  • Porous Germanium

  • porous silicon

  • Silicium-Photovoltaik...

  • Epitaxie

  • Si-Folien und SiC-Abs...

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