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2015
Conference Paper
Titel

Stress measurements on TSVs and BEoL structures with high spatial resolution

Abstract
Knowledge and control of local stress development in BEoL stacks and nearby TSVs in advanced 3D integrated devices is a key to their thermo-mechanical reliability. The paper presents a combined simulation / measurement approach to evaluate stresses generated in the result of the TSV and BEoL stack manufacturing and 3D bonding processes. Stress measurement methods of high spatial resolution capability are briefly benchmarked. The application of microRaman and the new FIB based stress release techniques on TSV structures are demonstrated in some detail.
Author(s)
Vogel, D.
Auerswald, E.
Auersperg, J.
Rzepka, S.
Hauptwerk
China Semiconductor Technology International Conference, CSTIC 2015
Konferenz
China Semiconductor Technology International Conference (CSTIC) 2015
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DOI
10.1109/CSTIC.2015.7153465
Language
English
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Fraunhofer-Institut für Elektronische Nanosysteme ENAS
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