Effect of different PDAs and a PMA on the electrical performance of TiN/ZAZ/TiN MIM capacitors
Abstract
ZrO2-based MIM capacitors are used in various memory as well as for RF applications. Thus, material tuning is necessary to selectively optimize the electrical performance. In this paper, the C-V, J-V and reliability properties of Al-doped ZrO2 MIM capacitors with TiN electrodes are compared for different anneals showing minor differences between PDA and PMA in N2. However, there is a significant influence of a PDA in NH 3 that forms a two-phase system in the high-k layer.
