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  4. RF-MEMS switch module in a 0.25 µm BiCMOS technology
 
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2012
  • Konferenzbeitrag

Titel

RF-MEMS switch module in a 0.25 µm BiCMOS technology

Abstract
A BiCMOS embedded RF-MEMS switch module is demonstrated. The module consists of four main blocks: 1) RF-MEMS switch technology, 2) Switch models for design-kit implementation, 3) High Voltage (HV) generation and digital interface, 4) Flexible packaging. The RF-MEMS switch technology is detailed by focusing on the contact model, especially in the down-state. Electromagnetic (EM) and lumped-element models are demonstrated to integrate into foundry process design kit (PDK). The integrated on-chip HV generation and control circuitries are described. A flexible packaging technique is also introduced to package either standalone switches or circuits with several switches.
Author(s)
Kaynak, M.
Wietstruck, M.
Zhang, W.
Drews, J.
Scholz, R.
Knoll, D.
Korndörfer, F.
Wipf, C.
Schulz, K.
Elkhouly, M.
Kaletta, K.
Suchodoletz, M.V.
Zoschke, K.
Wilke, M.
Ehrmann, O.
Mühlhaus, V.
Liu, G.
Purtova, T.
Ulusoy, A.C.
Schumacher, H.
Tillack, B.
Hauptwerk
IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012. Digest of Papers
Konferenz
Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) 2012
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DOI
10.1109/SiRF.2012.6160150
Language
Englisch
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