MEMS module integration into SiGe BiCMOS technology for embedded system applications
Different MEMS process techniques have been integrated to 0.25 m BiCMOS process for embedded system applications. Back-End-Off-Line (BEOL) integration technique was developed using standard metallization layers of BiCMOS process with additional MEMS process steps. As an example, an RF-MEMS capacitive switch was realized using BEOL embedded MEMS module. Backside substrate etch method was developed as another MEMS integration technique. This technique is demonstrated by several high-Q passive components which can prevent from substrate losses and on-chip antennas/sensors for multi-GHz applications. Lastly, thick copper metallization with low-k BCB dielectric material was developed and processed on top of BiCMOS BEOL. It provides 2 additional thick copper metallization layers and allows realizing high-Q passives and on-chip THz resonators. Several design examples realized by using developed MEMS modules and processing techniques were also analyzed.