A novel functionalization of AlGaN/GaN-pH-ISFETs for DNA-sensors
Eine neuartige Funktionalisierung von AlGaN/GaN-pH-Sensoren für die DNA-Sensorik
AlGaN/GaN pH sensitive devices were functionalized and passivated for the use as selective bio-sensors. For the passivation, a multilayer of SiO2 and SiNx is proposed, which stabilizes the pH-sensor, is biocompatible and has no negative impact on the following biofunctionalization. The functionalization of the GaN-surface was achieved by covalent bonding of 10-amino-dec-1-ene molecules by a photochemical process. After two different surface preparations islands of TFAAD are growing on the sensor surface by exposure with UV-light. In dependence on the surface pre-treatment and the illumination wavelength the first monolayer is completed after 3 h or 7 h exposure time dependent on the pre-treatment and illumination wavelength. Further exposure results in thicker films as a consequence of cross polymerization. The bonding to the sensor surface was analyzed by X-ray photoelectron spectroscopy, while the thickness of the functionalization was determined by atomic force microscopy scratching experiments. These functionalized devices based on the pH-sensitive AlGaN/GaN ISFET will establish a new family of adaptive, selective biomolecular sensors such as selective, reusable DNA sensors.
III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions