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  4. Composition and interface chemistry dependence in ohmic contacts to GaN HEMT structures on the Ti/Al ratio and annealing conditions
 
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2009
Konferenzbeitrag
Titel

Composition and interface chemistry dependence in ohmic contacts to GaN HEMT structures on the Ti/Al ratio and annealing conditions

Alternative
Einfluss des Al/Ti-Verhältnisses und der Temperbedingungen auf die Zusammensetzung und die Grenzflächenreaktionen von Ohmschen Kontakten für GaN HEMTs
Abstract
Electrical, thermal and chemical properties of Ti/Al/Ti/Au ohmic contacts with different former Ti-Al ratio are investigated for application in GaN HEMTs. Lowest resistivity of 4.22x10(exp -5) Ohm.cm2 has been obtained to the channel of the HEMT structure. It is found out that the initial Ti/Al ratio influences the optimal annealing temperature at which the lowest resistivity is obtained and the element distribution and interface chemistry of the annealed contacts. XPS analysis revealed two compounds contributing to ohmic properties: an intermetal compound AlAu2 in the contact layer and a semimetal TiN at the interface with GaN.
Author(s)
Kolaklieva, L.
Kakanakov, R.
Stefanov, P.
Cimalla, V.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Maroldt, S.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Ambacher, O.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Tonisch, K.
Niebelschütz, F.
Hauptwerk
Silicon carbide and related materials 2008
Konferenz
European Conference on Silicon Carbide and Related Materials (ECSCRM) 2008
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DOI
10.4028/www.scientific.net/MSF.615-617.951
Language
Englisch
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IAF
Tags
  • high electron mobilit...

  • HEMT

  • ohmic contact

  • Ohmscher Kontakt

  • sputter depth profili...

  • Sputtertiefenprofilie...

  • diffusion

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