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  4. Isotropic dry-etching of SiC for AlGaN/GaN MEMS fabrication
 
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2008
  • Konferenzbeitrag

Titel

Isotropic dry-etching of SiC for AlGaN/GaN MEMS fabrication

Author(s)
Niebelschütz, F.
Pezoldt, J.
Stauden, T.
Cimalla, V.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Tonisch, K.
Brueckner, K.
Hein, M.
Ambacher, O.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Schober, A.
Hauptwerk
COMMAD 2008, Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings
Konferenz
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) 2008
International Conference on Electronic Materials (ICEM) 2008
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DOI
10.1109/COMMAD.2008.4802084
Language
Englisch
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