Detailed studies of manganese in silicon using lifetime spectroscopy and deep-level transient spectroscopy

Different characterisation methods, particularly injection-dependent lifetime spectroscopy (IDLS), deep-level transient spectroscopy (DLTS) and temperature-dependent lifetime spectroscopy (TDLS), have been applied to investigate the defect parameters of manganese in silicon. The results of the two latter methods are presented in this paper. Special interest lay in the study of the manganese-boron pairs which could be detected by means of DLTS at low temperatures in the samples. They have been dissociated optically and thermally and subsequently analysed with lifetime spectroscopy. Furthermore the recombination-dominating defect level of interstitial manganese in silicon could be determined for the first time.