Design and W-CDMA characterization of a wideband AlGaN/GaN HEMT power amplifier for future 3G multiband base station applications
Entwurf und W-CDMA-Charakterisierung eines Weitband-AlGaN/GaN HEMT-Leistungsverstärkers für zukünftige 3G-Multiband Basisstationsanwendungen
A single stage wideband amplifier based on an AIGaN/GaN HEMT power cell with a total gate-width of 16 mm matched to 50 Ohm has been successfully developed and characterized by use of a single-carrier W-CDMA signal. A very wide bandwidth of more than 1.7 GHz covering several mobile radio frequency bands within L- and S-band with peak output power levels up to 44 dBm has been demonstrated with meeting 3GPP ACLR requirement in the complete measured frequency range. The maximum measured output power level was 45.8 dBm translating into a power density of 2.4 W/mm, which is superior compared to that of established technologies like LDMOS. The presented power amplifier shows the impressive potential of AIGaN/GaN HEMT technology regarding output power and bandwidth, supporting the development of future multiband/multistandard capable base stations.