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  4. VUV spectrophotometry for photomasks characterization at 193 nm
 
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2005
  • Konferenzbeitrag

Titel

VUV spectrophotometry for photomasks characterization at 193 nm

Abstract
This paper intends to develop a measurement system to characterize photomasks for 193 nm lithography applications. Based on the VUV spectrophotometer at the Fraunhofer IOF institute, some modifications have been addressed to fulfil these special measurements. Characterizations on photomasks have been successfully carried out, which show good correlations to simulations.
Author(s)
Yang, M.
Leiterer, J.
Gatto, A.
Kaiser, N.
Höllein, I.
Teuber, S.
Bubke, K.
Hauptwerk
Optical fabrication, testing, and metrology II
Konferenz
Conference "Optical Fabrication, Testing, and Metrology" 2005
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DOI
10.1117/12.625144
Language
Englisch
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