Accurate determination of bulk lifetime and surface recombination velocity by a comprehensive thinning experiment

This paper will present the accurate determination of the bulk lifetime Ï b of the minority charge carriers, as well the surface recombination velocities S of SiO2 and SiNx passivated surfaces on differently p-type doped silicon. The data determined in this work are in good agreement with Yablonovitch's [1] data for lifetime and will even give an enhancement to higher injection levels. In addition to this the three major Auger-limited models describing the Auger lifetime have been compared by using our measured data. Finally a correction factor is introduced for the classical three particle Auger recombination at high carrier densities.