Accurate determination of bulk lifetime and surface recombination velocity by a comprehensive thinning experiment
This paper will present the accurate determination of the bulk lifetime Ï b of the minority charge carriers, as well the surface recombination velocities S of SiO2 and SiNx passivated surfaces on differently p-type doped silicon. The data determined in this work are in good agreement with Yablonovitch's  data for lifetime and will even give an enhancement to higher injection levels. In addition to this the three major Auger-limited models describing the Auger lifetime have been compared by using our measured data. Finally a correction factor is introduced for the classical three particle Auger recombination at high carrier densities.