High conversion gain flip-chip integrated photoreceivers for broad-band (40 Gbit/s) and narrow-band (10 GHz) applications
Flip-Chip aufgebaute Photoempfänger für Breitband- (40 Gbit/s) und Nahband- (10 GHz) Anwendungen mit hohem Konversionsgewinn
High conversion gain photoreceivers for broad-band (40 Gbit/s) and narrow-band (10 GHz) applications were manufactured using GaAs-based pseudomorphic HEMT (pHEMT) amplifiers. The photoreceivers include flip-chip mounted side illuminated multi-mode waveguide photodiodes on InP substrate. Using the waveguide photodiode which has high responsivity, high gain of the photoreceivers has been achieved.