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1998
  • Konferenzbeitrag

Titel

Lithographic process simulation for scanners

Abstract
In scanner systems wafer and reticle move continuously with respect to the projection optics. This movement across image field results in varying lateral shift and focus positions and in an averaging of aberrations from different positions of the projection system. Several approaches for the effective simulation of these effects are discussed. Based on simulated and experimental data, scanner effects are quantified and compared to results of static stepper exposure.
Author(s)
Erdmann, A.
Arnz, M.
Maenhoudt, M.
Baselmans, J.
Osnabrugge, J.C. van
Hauptwerk
Optical microlithography XI
Konferenz
Optical Microlithography Conference 1998
Thumbnail Image
DOI
10.1117/12.310746
Language
Englisch
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ISIT
Tags
  • aberration averaging

  • lithography simulatio...

  • step and scan

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