High current metal-ion source for activated deposition
Abstract
A high current metal ion source was designed and successfully used for film deposition. The plasma flux of some amperes is produced by transporting the fully ionized plasma from a pulsed high current vacuum arc through a curved magnetic duct. Deposition rates of more than ten nm per second can be achieved. The deposited layers are free of particles, holes and pits. Films of about 50 nm have been deposited homogeneously (thickness variation below 5 %) on a 4 inch sub-strate after 300 pulses. Repetition rates are adjustable from more than 100 Hz down to single pulses in dependence on the acceptable thermal input. Several applications are described in the paper:1. Deposition of hard, amorphous carbon films (dlc)2. Droplet-free TiN films for advanced applications 3. Transparent Al2O3 protective coatings 4. Metallization for microelectronics.
