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  4. GaAS one-sun and concentrator solar cells based on LPE-ER grown structures
 
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1994
  • Konferenzbeitrag

Titel

GaAS one-sun and concentrator solar cells based on LPE-ER grown structures

Abstract
The liquid-phase epitaxy etchback regrowth (LPE-ER) technique was used to grow AlGaAs/GaAs heteroface and AlGaAs/AlyGa1-y As(0.1<y<0.3) heteroface solar cell structures. The influence of substrate position (vertical or horizontal) during the LPE-ER process was investigated. A model for the growth of the LPE-ER structure in vertical substrate position is proposed. The LPE-ER grown structures were used to fabricate one-sun and concentrator solar cells. Efficiencies of up to 22.4% (AM1.5G) were achieved for solar cells of 4 cm2 area. For concentrator application an efficiency of 24.8% (AM1.5, direct) was measured at 105 suns on a 13 mm2 solar cell. A 243 cm2 aperture area concentrator module consisting of 12 Fresnel lenses and 12 LPE-ER grown GaAs solar cells showed an efficiency of 20.3% under outdoor conditions.
Author(s)
Baldus, A.
Blieske, U.
Duong, T.
Lutz, F.
Sulima, O.
Schetter, C.
Wettling, W.
Bett, A.W.
Hauptwerk
IEEE First World Conference on Photovoltaic Energy Conversion 1994. Vol.2
Konferenz
World Conference on Photovoltaic Energy Conversion 1994
Photovoltaic Specialists Conference 1994
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DOI
10.1109/WCPEC.1994.520544
Language
Englisch
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