Reliability investigations of thin film metallizations on AlN-ceramics
Abstract
AlN-Ceramic is very suitable as carrier substrate for multichip modules because of its high thermal conductivity and its coefficient of thermal expansion, which is closely matched to that of Si. Different thin film metallizations were realized on AlN-substrates. A line resolution of 10 mym grid is possible on polished surface. The adhesion of the metallizations on AlN is comparable to that on Al2O3. The reliability of the metallizations was tested by temperature and humidity tets.
