• English
  • Deutsch
  • Log In
    or
  • Research Outputs
  • Projects
  • Researchers
  • Institutes
  • Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Konferenzschrift
  4. Half micrometer N-MOS technology using X-ray lithography
 
  • Details
  • Full
Options
1987
  • Konferenzbeitrag

Titel

Half micrometer N-MOS technology using X-ray lithography

Abstract
MOSFETs with effective channel lengths down to 0.3 mym have been realized using x-ray lithography. To determine process parameters for device optimization two dimensional process and device modeling was employed. In addition, ring oscillators with different numbers of stages were fabricated to evaluate the performance of this technology. (IMT)
Author(s)
Huber, H.-L.
Lauer, V.
Bauer, F.
Korec, J.
Balk, P.
Hauptwerk
ESSDERC '87. 17th European Solid State Device Research Conference. Proceedings
Konferenz
European Solid State Device Research Conference (ESSDERC) 1987
Thumbnail Image
Language
Englisch
google-scholar
ISIT
Tags
  • mask technology

  • Maskentechnologie

  • MOSFET

  • Röntgenlithographie

  • X-ray lithography

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Send Feedback
© 2022