Fast CO2 laser recrystallization for 3D integration
Abstract
A laser recrystallization equipment has been developed using a high power CO2 laser. This system allows full wafer processing using a sweeped-line zone melt system. It has the high energy density required to maintain a temperature differential between the molten polysilicon layer and the substrate, as well as the high throughput rate of a zone processing system. MOS transistors have been fabricated in recrystallized polysilicon layers and characterized through electrical measurements. (IFT)
