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  4. Light guiding and electrooptical modulation in InGaAsP/InP double heterostructures
 
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1983
Conference Paper
Titel

Light guiding and electrooptical modulation in InGaAsP/InP double heterostructures

Abstract
The fabrication of long rig-waveguides in the InGaAsP system with low loss suitable for integrated optics has been demonstrated. Furthermore, the authors showed, for the first time, electrooptical light modulation in Q-layers and determined the linear (Pockels effect) and quadratic (Kerr Effect) electrooptic effect. The linear electrooptic effect, r41, is independent of wavelength and composition with a value of r41=-1.4*10-10 cm/V over the limited range of measurement, which is extended in respect to earlier experiments. A strong quadratic electrooptic effect has been identified, which strongly depends on the bandgap and photon energy, as does the associated electroabsorption (Franz-Keldysh) effect.
Author(s)
Albrecht, P.
Bach, H.G.
Bornholdt, C.
Doldissen, W.
Franke, D.
Grote, N.
Krauser, J.
Niggebrugge, U.
Nolting, H.P.
Schlak, M.
Tiedke, I.
Logan, R.A.
Reinhart, F.K.
Hauptwerk
Second European Conference on Integrated Optics
Konferenz
European Conference on Integrated Optics (ECIO) 1983
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Language
English
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Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI
Tags
  • electro-optical devic...

  • gallium arsenide

  • iii-v semiconductors

  • indium compounds

  • integrated optics

  • kerr electro-optical ...

  • optical modulation

  • optical waveguides

  • pockels effect

  • InGaAsP-InP double he...

  • light guiding

  • iii-v semiconductor

  • linear electrooptic e...

  • quadratic electroopti...

  • franz keldysh effect

  • fabrication

  • long rig-waveguides

  • low loss

  • q-layers

  • kerr effect

  • bandgap

  • photon energy

  • electroabsorption

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