Verfahren zur Herstellung einer metallischen Kontaktierungsstruktur auf einer Oberfläche einer Halbleiterstruktur und photovoltaischen Solarzelle

The method involves applying an aluminum-containing layer (5) on a surface of a semiconductor structure in a contact region i.e. cell contact region, of a surface. Aluminum is alloyed from the aluminum-containing layer into the semiconductor structure by thermal effect for forming a p-doped region (4), which is formed as a dopant by aluminum, in the semiconductor structure at the contact region. The aluminum-containing layer in the contact region is partially removed by an acid etching agent. The contact region is electrochemically metalized with metal, which is not aluminum. The acid etching agent contains hydrochloric acid, sodium hydroxide, and sodium trichloride. An independent claim is also included for a photovoltaic solar cell.