Integrierter Optokoppler mit organischem Lichtemitter und anorganischem Photodetektor

(A1) Ein Optokoppler weist einen organischen Lichtemitter und einen anorganischen Photodetektor mit einer Detektoroberflaeche auf, wobei die Detektorflaeche mit dem organischen Lichtemitter optisch gekoppelt ist. Der organische Lichtemitter wandelt ein elektrisches Eingangssignal in ein Lichtsignal um und der anorganische Photodetektor wandelt das Lichtsignal in ein elektrisches Ausgangssignal um, wobei der organische Lichtemitter und der anorganische Photodetektor in einem Bauelement integriert und galvanisch getrennt sind.

US 20080054275 A1 UPAB: 20080331 NOVELTY - The optocoupler has an organic light emitter (100) converting an electrical input signal into a light signal and an inorganic photodetector converting the light signal into an electrical output signal. The organic light emitter and the inorganic photodetector are integrated in a component. The shielding planes (310a,310b) which cause a light shielding and a focusing of the light signal are electrically isolated from the light-emitting surface. USE - Optocoupler such as a monolithically integrated complementary metal oxide semiconductor (CMOS) optocoupler with an organic light emitting diode (OLED) light source. ADVANTAGE - The complexity of the construction and connection technique (CCT) for the integration is reduced and the costs are reduced. The monolithic integration of light source, electrical insulator, light guide and photodetector on a chip can easily be implemented. Standard CMOS layers/structures can be used as electrical insulator and light guide, resulting into an improvement of the isolation strength when using a silicon-on-insulator-complementary metal oxide semiconductor (SOI-CMOS) substrate and a reduction of the chip area. Provides the possibility of a complex integration of an activation circuit for the light emitter and electronic reading unit for the photodetector. High isolation voltage is achieved, despite an eventually complex integration of the electronic emitter-activation and photodetector-reading unit. Isolation voltage reached can be flexibly adjusted through an appropriate selection of the layer thicknesses or the layer materials.