Paper No S10.3. Efficiency enhancement of InP-based inverted QD-LEDs by polyethylenimine-modified Al:Zno layer

In this paper, we report efficiency enhancement of indium phosphide (InP) quantum dot-based light-emitting diodes (QD-LEDs) using polyethylenimine (PEI) surface modifier. Adapting solution processed (PEI) layer on top of the aluminum-doped zinc oxide (Al:ZnO) nanoparticle (NP) layer, the leakage current of inverted device was Suppressed and electron injection into conduction band of InP/ZnSe/ZnS QDs also facililated by interfacial dipoles of thin PEI layer. As a results, the current efficiency was dramatically increased from 0.07 cd/A to 2.84 cd/A.