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2013
Journal Article
Titel
Low temperature grown be-doped InGaAs/InAlAs photoconductive antennas excited at 1030 nm
Abstract
We demonstrate pulsed THz emission and detection in low temperature (LT) MBE grown Be-doped InGaAs/InAlAs multi-nanolayer structures for an excitation wavelength of 1030 nm. We obtained spectra with a bandwidth of up to 3 THz. Furthermore, we performed differential transmission experiments to investigate the material's relaxation time constants.