Atomic layer deposition of ruthenium films on strontium titanate
Abstract
Atomic layer deposition of ruthenium on SrTiO(3) layers was investigated using (C(2)H(5)C(5)H(4)) center dot (NC(4)H(4))Ru and air as precursors. For comparison, the growth was studied also on ZrO(2) films and SiO(2)/Si surfaces. Deposition temperature was 325 degrees C. Using rather short but intense air pulses, smooth and uniform Ru films were deposited on SrTiO(3). The films were crystallized at early stages of the growth. The nucleation density and rate on SrTiO(3) were notably lower compared to that on ZrO(2) and SiO(2), but the physical qualities including the film conductivity were considerably enhanced after reaching Ru film thickness around 10 nm.
