Fabrication of metal-oxide semiconductor gas-sensor array
Abstract
With four sensing elements on one substrate, the sensor array is fabricated by thin film technology. The base structure is produced on a 4 silicon wafer. The Pt electrodes, Pt heater and Pt temperature sensor are deposited first. The metal-oxide sensitive layer SnO2 is deposited later. Then the sensor is bonded, housed and measured. The experimental results show the sensor response for different trace gases, methane, carbon monoxide, hydrogen, nitrogen dioxide and ammonia.
