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  4. Origin of the photoluminescence line at 0.8 eV in undoped and Si-doped GaSb grown by MOVPE
 
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2002
Journal Article
Titel

Origin of the photoluminescence line at 0.8 eV in undoped and Si-doped GaSb grown by MOVPE

Abstract
We study the low-temperature photoluminescence (PL) of unintentionally doped and Si-doped bulk GaSb grown by low-pressure metal-organic vapour phase epitaxy (MOVPE) from triethylgallium (TEGa), trimethylantimony (TMSb) and silane (SiH/sub 4/). The background doping with Si in nominally undoped layers is shown to be caused by the TMSb precursor. Intentional Si-doping using silane results in p-doping, a reduction of the material compensation, a substantial decrease in the native acceptor concentration and a dramatic gain in the integral PL intensity compared to unintentionally doped samples. These findings suggest that the Si atoms are incorporated predominantly in the anionic sublattice. The Si- related PL line with a maximum at 0.8 eV observed in the PL spectra of both types of samples at helium temperatures is identified as a transition of a free electron to a neutral acceptor Si/sub Sb/ with an activation energy of approximately= 9 meV. The PL spectra of GaSb layers with acceptor concentrations approaching 1 x 10/sup 17/ cm/sup -3/, and particularly the 'blueshift' of the peak at 0.800 eV with the temperature rise, can be understood by taking into account the impact of large-scale fluctuations in the charged impurity concentration. The established properties of low-pressure MOVPE-grown Si-doped GaSb are promising for the applicability of this material to GaSb-based devices.
Author(s)
Agert, C.
Gladkov, P.S.
Bett, A.W.
Zeitschrift
Semiconductor Science and Technology
Thumbnail Image
DOI
10.1088/0268-1242/17/1/307
Language
English
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Fraunhofer-Institut für Solare Energiesysteme ISE
Tags
  • undoped GaSb

  • Si-doped GaSb

  • MOVPE

  • low-temperature photoluminescence

  • PL

  • low-pressure metalorganic vapour phase epitaxy

  • triethylgallium

  • TEGa

  • trimethylantimony

  • TMSb

  • silane

  • p-doping

  • material compensation reduction

  • native acceptor concentration

  • pl intensity

  • anionic sublattice

  • helium temperature

  • free electron-neutral acceptor transition

  • activation energy

  • acceptor concentration

  • blueshift

  • charged impurity concentration

  • GaSb-based device

  • GaSb

  • SiH4

  • Epitaxie MOVPE

  • TPV

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