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2002
Journal Article
Titel
65 GHz bandwidth optical receiver combining a flip-chip mounted waveguide photodiode and GaAs-based HEMT distributed amplifier
Alternative
Aus einer Wellenleiter-Photodiode, sowie einem in GaAs-HEMT-Technologie realisiertem verteilten Verstärker mittels Flip-Chip-Technologie hergestelltem Photoempfänger mit 65 GHz Bandbreite
Abstract
Hybrid integrated photoreceivers with up to 65 GHz bandwidth are presented. They consist of GalnAs/AlGalnAs/AlInAs multimode waveguide photodiodes, flip-chip bonded on GaAs-based pseudomorphic HEMT distributed amplifiers with a very low input impedance. The overall O/E conversion gain is as high as 120 V/W at 1.55 µm wavelength.
Author(s)