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4 nm gate dielectrics prepared by RTP low pressure oxidation in O2 and N2O atmosphere
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1998
Zeitschriftenaufsatz
Titel
4 nm gate dielectrics prepared by RTP low pressure oxidation in O2 and N2O atmosphere
Author(s)
Bauer, A.J.
Burte, E.P.
Ryssel, H.
Zeitschrift
Microelectronics reliability
DOI
10.1016/S0026-2714(97)00037-1
Language
Englisch
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