Molecular beam epitaxy growth of lattice-matched AlGaInAs/GaInAs multiple quantum well distributed feedback laser structures with gratings defined by implantation enhanced intermixing

AlGaInAs/GaInAs multiple quantum well (MQWs) are particularly suited for planar device integration using local refractive index modification by masked implantation enhanced intermixing (MIEI). Suitable molecular beam epitaxy (MBE) growth conditions are elaborated to achieve 1.3 mu m AlGaInAs/GaInAs MQW distributed feedback (DFB) lasers taking advantage of the capability of the MIEI process to define the gratings. High-quality MBE overgrowth on AlGaInAs necessary for device completion after H* radical treatment is demonstrated.