Raman spectroscopic study on the wirelike incorporation of Si dopant atoms on GaAs-001- vicinal surfaces.
Ramanspektroskopische Untersuchung des drahtartigen Einbaus von Si Dotieratomen auf GaAs-001- Vicinaloberflächen
Raman scattering by collective electronic excitations from a delta-doping layer has been used to investigate the ordered incorporation of Si dopant atoms on vicinal GaAs(001) surfaces. In a series of delta-doped samples grown by molecular beam epitaxy (MBE) under specific conditions the Si dopant atoms were found to be incorporated predominantly on Ga sites, even at a doping concentration as high as 1.8 x 10 high 13 cm high -2. A pronounced polarization asymmetry in the Raman scattering intensity of collective intersubband plasmon-phonon modes was observed in a sample grown under conditions established by real-time high-energy electron diffraction to be favorable for wirelike Si incorporation.