Electro-optic modulation by electron transfer in multiple InGaAsP/InP barrier, reservoir, and quantum well structures

Recently, a novel optical modulator heterostructure has been introduced based on voltage controlled electron transfer from a reservoir to a closely spaced quantum well. It has proven to exhibit large absorptive and refractive modulation at high speed and low power dissipation. In order to achieve monolithic integration with the existing high quality InGaAsP/InP lasers for high bit-rate systems, it is crucial to implement such devices within the same material system. In this letter, the authors demonstrate for the first time, InGaAsP/InP electron-transfer modulators grown using metalorganic vapor phase epitaxy.