Formation of rhodium silicide by rapid thermal annealing and by ion beam mixing
Rhodium silicide (RhSi) of a specific resistivity of 120 ± 10 mo· cm was formed by the solid phase reaction of rhodium and silicon by use of rapid thermal annealing at temperatures ranging from 600 up to 900°C. Annealing at temperatures above 1000°C resulted in a drastic increase in specific resistivity and in an inhomogeneous, tarnished layer. No reaction of rhodium and silicon oxide after annealing took place. Through-metal arsenic implantation was used to mix rhodium with the silicon substrate. Without annealing after the mixing process, no silicide phase could be identified by X-ray diffraction measurements. By annealing at 800°C the silicide phase RhSi was formed.