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  4. Electronic structure of the neutral manganese acceptor in gallium arsenide
 
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1987
Journal Article
Title

Electronic structure of the neutral manganese acceptor in gallium arsenide

Abstract
A new manganese-related isotropic electron-spin-resonance signal at g=2.77 has been observed in GaAs. It is shown to arise from the neutral Mn acceptor, MnE0. The analysis gives an answer to the longstanding question of whether the structure of MnE0 corresponds to 3dE4 or do 3dE5+hole. The data clearly favor the latter case, thus revealing that Mn is an exception within the 3d acceptor family in GaAs. (IAF)
Author(s)
Schneider, J.
Wilkening, W.
Baeumler, Martina  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Köhl, F.
Kaufmann, U.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
Physical review letters  
DOI
10.1103/PhysRevLett.59.240
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • Elektronen Spin Resonanz

  • Elektronenspinresonanz

  • Gallium Arsenid

  • Struktur(elektronisch)

  • Susceptibilität(magnetisch)

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