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1988
Journal Article
Titel

Thermal degradation effects in InP

Abstract
Thermal degradation in InP has been regarded to be equivalent to surface deformation. By means of luminescence microscopy the authors discovered a much larger scale of degradation effects. Crystallographic defects of several geometrical characteristics have been observed although the surfaces seemed to be perfectly smooth. The standard methods of protection against degradation used in liquid phase epitaxy turned out to be unreliable concerning the invisible degradation effects. The authors propose a model which describes the evolution of degradation starting with invisible crystallographic defects. An extreme loss of phosphorus concentrated around dislocations causes local melting representing the final and visible stage of degradation. It is supposed that P vacancies which have never been noticed before are responsible for inhomogeneities affecting processing and the reliability of optoelectronic devices.
Author(s)
Sartorius, B.
Schlak, M.
Rosenzweig, M.
Parschke, K.
Zeitschrift
Journal of applied physics
Thumbnail Image
DOI
10.1063/1.340122
Language
English
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Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI
Tags
  • dislocations

  • heat treatment

  • iii-v semiconductors

  • indium compounds

  • liquid phase epitaxia...

  • luminescence of inorg...

  • melting

  • photoluminescence

  • surface topography

  • vacancies (crystal)

  • thermal degradation

  • semiconductors

  • photoluminescence mic...

  • surface structure

  • surface deformation

  • liquid phase epitaxy

  • invisible degradation...

  • invisible crystallogr...

  • local melting

  • p vacancies

  • inhomogeneities

  • processing

  • reliability

  • optoelectronic device...

  • inp

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