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2011
Journal Article
Title

InAs/GaSb superlattice technology

Abstract
We present the InAs/GaSb type-II superlattice dual-color technology developed at Fraunhofer IAF. This includes insights into some of the test methodologies employed at various stages during the fabrication process, which ensure that the basic requirements for achieving high detector performance are met. Much effort is put in improving and monitoring the quality of the substrate and the epilayers. We also present performance data from a dual-color mid-wavelength infrared (MWIR) camera which incorporates the latest backside process technology.
Author(s)
Rutz, Frank  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Rehm, Robert  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Walther, Martin  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schmitz, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kirste, Lutz  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Wörl, Andreas  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Masur, J.-M.
Schreibner, R.
Ziegler, J.
Journal
Infrared physics and technology  
Conference
International Conference on Quantum Structure Infrared Photodetector (QSIP) 2010  
DOI
10.1016/j.infrared.2010.12.021
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • InAs/GaSb superlattice

  • infrared focal plane array

  • MWIR

  • dual-color

  • wafer inspection

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