Room temperature 96x96 InGaAs/InP SPAD array for SWIR imaging

We present a 96x96 InGaAs/InP single photon avalanche diode (SPAD) array for detection at 1550 nm wavelength. The pixels have a diameter of 15 µm and a 25 µm pitch, resulting in a fill factor of 28.3%. The dark count rates (DCR) of the array were measured for a subset of 6x24 pixels. The DCR vs. photon detection efficiency of a representative SPAD and the breakdown voltage statistics for a subset of 6x96 pixels were recorded at room temperature. The DCR of the measured subset has a median value of very low 87 kcps. At corresponding excess bias, we measured a photon detection efficiency (PDE) of 15%. The breakdown voltage of the 6x96 subset has a median value of 62.2 V with a standard deviation of only 72 mV. The results indicate a strong candidate for a SWIR imaging sensor in low-level-light applications.