Ultra-low-inductance power module for fast switching semiconductors

An ultra-low-inductance power module using silicon carbide (SiC) devices has been developed by using an advanced packaging technology. The switching cell inductance was reduced significantly due to the absence of bond wires for chip interconnection. This was achieved by using PCB technologies on a DCB substrate to provide more interconnection layers and design freedom. The test result after fabrication showed the superiority of advanced packaging methods relating to switching behaviour. Almost no overshoot voltage and no ringing during turn-off were detected. The measured switching cell inductance went below 1nH which allows high speed switching and/or high efficiency applications by virtue of low switching losses.