Multi-Level Characterization and Calibration of an eWLB Automotive Amplifier

We present the first automotive SMD amplification module that features an E-Band power amplifier and two calibration chips for built-in-self-test capabilities in a small 5.5 mm × 4.5 mm (24.75 mm²) form factor. All chiplets were fabricated in Infineon's 130 nm B11HFC technology (f<inf>T</inf>/f<inf>max</inf> = 250/370 GHz) and embedded in their two RDL eWLB package. Verification at the chip, package and PCB level was performed with measured powers, S-parameters and interconnect losses. Successful TOSM calibrations with integrated standards achieved errors below 0.1 dB, while exhibiting a similar reproducibility compared to commercially available substrates. Irregularities caused faulty calibration on prototype PCBs, yet temperature stability was confirmed across all integration stages. Given a 3.15/7.28 GHz narrower bandwidth alongside a worst-case power loss of 2/1.6 dB for the packaged/PCB mounted module, all stages cover the automotive band (76-81 GHz) within a continuous bandwidth of at least 67-83 GHz, providing a maximum deembedded output power of 13.18-13.98 dBm (11.69-12.49 dBm at the soldercontacts).